On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
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Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes
Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well (QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current continuity relation for drift and diffusion carrier transport across the QW-barrier system. A self-consistent 6-band k p method is used to calculate the band structure for InGaN QW. The analysis indicates that the...
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